SSIG15N135H Datasheet, PDF (1/9 Pages) Silikron Semiconductor Co.,LTD. – Advanced Trench-FS Process Technology

Main Product Characteristics:
V_CES
1350V
V_CE(sat) 1.9V (typ.)
I_D
15A @ TC = 100°C
Features and Benefits:
 Advanced Trench-FS Process Technology
 Low Collector-Emitter Saturation Voltage, Typical
Data is 1.9V@15A
 Fast Switching
 High Input Impedance
 Pb- Free Product
 Power Switch Circuit of Induction Cooker
TO-247
SSIG15N135H
Schematic diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces V_CE(sat) rating. These
features combine to make this design an extremely efficient and reliable device for use in power switching
application of induction cooker and a wide variety of other applications.
Absolute max Rating:
Symbol
IC @ TC = 25°C
IC @ TC = 100°C
ICM
PD @TC = 25°C
VCES
VGES
TJ
TSTG
TL
Parameter
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Power Dissipation@ TC = 25°C
Power Dissipation@ TC = 100°C
Collector-Emitter Voltage
Gate-to-Emitter Voltage
Operating Junction Temperature Range
Storage Temperature Range
Maximum Temperature of Solding
Max.
30
15
45
260
130
1350
± 30
-55 to +175
-55 to +175
260
Units
A
W
W
V
V
°C
°C
°C
©Silikron Semiconductor CO.,LTD.
2015.03.09
www.silikron.com
Version : 1.0
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