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SSFT4003 Datasheet, PDF (1/9 Pages) Silikron Semiconductor Co.,LTD. – Advanced MOSFET process technology | |||
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Main Product Characteristics:
VDSS
40V
RDS(on) 2.4mâ¦(typ.)
ID
200A â
Features and Benefits:
TO-220
SSFT4003
 Advanced MOSFET process technology
 Special designed for PWM, load switching and
general purpose applications
 Ultra low on-resistance with low gate charge
 Fast switching and reverse body recovery
 175â operating temperature
SSFT4003/SSFT4003A
TO-263
SSFT4003A
Schematic diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Currentâ¡
Power Dissipationâ¢
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.3mH
Avalanche Current @ L=0.3mH
Operating Junction and Storage Temperature Range
Max.
200â
135â
750
220
1.5
40
± 24
912
78
-55 to +175
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO., LTD.
2012.09.17
www.silikron.com
Version: 2.1
page 1 of 9
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