SSFT4002 Datasheet, PDF (1/6 Pages) Silikron Semiconductor Co.,LTD. – Special designed for Convertors and power controls

Main Product Characteristics:
SSFT4002
V_DSS
R_DS(on)
40V
2.1 mohm
S_SS_SFF_TT₃4₉0₀0₆2
I_D
220A
Features and Benefits:
Advanced trench MOSFET process technology
 Special designed for Convertors and power controls
 Ultra low on-resistance
 175℃ operating temperature
 High Avalanche capability and 100% tested
TO220
Marking and pin
Assignment
Schematic diagram
Description:
It utilizes the latest trench processing techniques to achieve extremely low on resistance, fast switching speed and
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety of other applications
Absolute max Rating:
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current①
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy②
Avalanche Current @ L=0.3mH
Operating Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
220
145
85
850
220
1.5
± 24
1200
90
-55 to + 175
300 (1.6mm from
case )
Units
A
W
W/°C
V
mJ
A
°C
Thermal Resistance
Symbol
R_θJC
R_θJA
Characterizes
Junction-to-case
Junction-to-ambient ④
Junction-to-Ambient (PCB mounted, steady-state)⑤
Value
0.62
60
40
Unit
℃/W
℃/W
℃/W
©Silikron Semiconductor CO.,LTD.
2010.09.03
www.silikron.com
Version : 1.1(preliminary)
page 1of6