SSFN2569 Datasheet, PDF (1/6 Pages) Silikron Semiconductor Co.,LTD. – Advanced MOSFET process technology

Main Product Characteristics:
V_DSS
-20V
R_DS(on) 55mΩ (typ.)
I_D
-3.4A
Features and Benefits:
 Advanced MOSFET process technology
 Special designed for PWM, load switching and
general purpose applications
 Ultra low on-resistance with low gate charge
 Fast switching and reverse body recovery
 150℃ operating temperature
DFN 3x2-8L
Bottom View
SSFN2569
D1
D2
G1
G2
S1
S2
Schematic diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute max Rating:
Symbol
ID @ TC = 25°C
IDM
PD @TC = 25°C
VDS
VGS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
Power Dissipation③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Operating Junction and Storage Temperature Range
Thermal Resistance
Symbol
RθJC
Characterizes
Junction-to-case③
RθJA
Junction-to-ambient (t ≤ 10s) ④
Max.
-3.4
-17
1.7
0.014
-20
±8
-55 to +150
Typ.
—
—
Max.
74
60
Units
A
W
W/°C
V
V
°C
Units
℃/W
℃/W
©Silikron Semiconductor CO., LTD.
2013.06.07
www.silikron.com
Version: 1.0
page 1 of 6