SSFN2316E Datasheet, PDF (1/5 Pages) Silikron Semiconductor Co.,LTD. – High Power and current handing capability

SSFN2316E
GENERAL FEATURES
● V_DS = 20V,I_D = 6.5A
R_DS(ON) < 35mΩ @ V_GS=2.5V
R_DS(ON) < 30mΩ @ V_GS=3.1V
R_DS(ON) < 24mΩ @ V_GS=4V
R_DS(ON) < 23mΩ @ V_GS=4.5V
ESD Rating：2000V HBM
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Application
●Battery protection
●Load switch
●Power management
Schematic diagram
Pin Assignment
GEM2928-8L TOP VIEW
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
N2316E
SSFN2316E
GEM2928-8L
-
Tape width
-
Quantity
-
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
I_D
Drain Current-Continuous@ Current-Pulsed (Note 1)
I_DM
Maximum Power Dissipation
P_D
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
20
±12
6.5
40
1.4
-55 To 150
Unit
V
V
A
A
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
R_θJA
83
℃/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV_DSS
V_GS=0V I_D=1mA
Min Typ Max Unit
20
V
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1
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