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SSFN2269 Datasheet, PDF (1/5 Pages) Silikron Semiconductor Co.,LTD. – High Power and current handing capability | |||
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SSFN2269
DESCRIPTION
The SSFN2269 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 2.5V.
GENERAL FEATURES
â VDS = -20V,ID =-3.3A
RDS(ON) < 90m⦠@ VGS=-4.5V
RDS(ON) < 120m⦠@ VGS=-2.5V
â High Power and current handing capability
â Lead free product is acquired
â Surface Mount Package
Schematic diagram
Marking and pin Assignment
Application
âBattery protection
âLoad switch
âPower management
DFN2X2-6L
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
SSFN2269
SSFN2269
DFN2X2-6L
ï¼
Tape width
ï¼
Quantity
ï¼
ABSOLUTE MAXIMUM RATINGS(TA=25âunless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
ID
Drain Current-Continuous@ Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-20
±8
-3.3
-20
1.5
-55 To 150
Unit
V
V
A
A
W
â
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
83
â/W
ELECTRICAL CHARACTERISTICS (TA=25âunless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
Min Typ Max Unit
-20
V
©Silikron Semiconductor CO.,LTD.
1
http://www.silikron.com
v1.1
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