SSFN2220 Datasheet, PDF (1/5 Pages) Silikron Semiconductor Co.,LTD. – High Power and current handing capability

SSFN2220
DESCRIPTION
The SSFN2220 uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and operation
with gate voltages as low as 2.5V. This device is suitable
for use as a Battery protection or in other Switching
application.
GENERAL FEATURES
● V_DS = 20V,I_D = 6A
R_DS(ON) < 39mΩ @ V_GS=2.5V
R_DS(ON) < 25mΩ @ V_GS=4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Application
●Battery protection
●Load switch
●Power management
Pb
Schematic diagram
Pin Assignment
DFN2X2-8L bottom view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
2220
SSFN2220
DFN2X2-8L
-
Tape width
-
Quantity
-
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
I_D
Drain Current-Continuous@ Current-Pulsed (Note 1)
I_DM
Maximum Power Dissipation
P_D
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
20
±12
6
40
1.3
-55 To 150
Unit
V
V
A
A
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
R_θJA
100
℃ /W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV_DSS
V_GS=0V I_D=1mA
Zero Gate Voltage Drain Current
I_DSS
V_DS=20V,V_GS=0V
Gate-Body Leakage Current
I_GSS
V_GS=±10V,V_DS=0V
Min Typ Max Unit
20
V
1
μA
±10
μA
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1
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