SSFM3008H1 Datasheet, PDF (1/8 Pages) Silikron Semiconductor Co.,LTD. – Advanced trench MOSFET process technology

Main Product Characteristics:
SSFM3008H1
V_DSS
30V
R_DS(on) 7.4mohm(typ.)
SSFM3008H1
I_D
20A
SOP-8
Features and Benefits:
„ Advanced trench MOSFET process technology
„ Special designed for PWM, load switching and
general purpose applications
„ Ultra low on-resistance with low gate charge
„ Fast switching and reverse body recovery
„ 175℃ operating temperature
Marking and pin
Assignment
Schematic diagram
Description:
It utilizes the latest FRRMOS (fast reverse recovery MOS) trench processing techniques to achieve the high
cell density and reduces the on-resistance, fast switching and soft reverse recovery time. These features
combine to make this design an extremely efficient and reliable device for use in power switching application
and a wide variety of other applications
Absolute max Rating:
Symbol
I_D @ TC = 25°C
I_D @ TC = 100°C
I_DM
P_D @TC = 25°C
V_DS
V_GS
E_AS
I_AS
T_J T_STG
Parameter
Continuous Drain Current, V_GS @ 10V①
Continuous Drain Current, V_GS @ 10V①
Pulsed Drain Current②
Power Dissipation③
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.1mH
Avalanche Current @ L=0.1mH
Operating Junction and Storage Temperature Range
Thermal Resistance
Max.
20
16
136
3.1
30
± 20
100
44
-55 to + 175
Units
A
W
V
V
mJ
A
°C
Symbol
R_θJC
R_θJA
Characterizes
Junction-to-case③
Junction-to-ambient (t ≤ 10s) ④
Junction-to-Ambient (PCB mounted, steady-state) ④
Typ.
—
—
—
Max.
22
35
65
Units
℃/W
℃/W
℃/W
©Silikron Semiconductor CO., LTD.
2011.11.05
www.silikron.com
Version: 1.0
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