SSFM3008 Datasheet, PDF (1/8 Pages) Silikron Semiconductor Co.,LTD. – Advanced trench MOSFET process technology

Main Product Characteristics:
V_DSS
30V
R_DS(on) 5.0mohm(typ.)
I_D
50A
TO252
Features and Benefits:
„ Advanced trench MOSFET process technology
„ Special designed for PWM, load switching and
general purpose applications
„ Ultra low on-resistance with low gate charge
„ Fast switching and reverse body recovery
„ 175℃ operating temperature
SSFM3008
SSFM3008
Marking and pin
Assignment
Schematic diagram
Description:
It utilizes the latest FRRMOS (fast reverse recovery MOS) trench processing techniques to achieve the high
cell density and reduces the on-resistance, fast switching and soft reverse recovery time. These features
combine to make this design an extremely efficient and reliable device for use in power switching application
and a wide variety of other applications
Absolute max Rating:
Symbol
I_D @ TC = 25°C
I_D @ TC = 100°C
I_DM
P_D @TC = 25°C
V_DS
V_GS
E_AS
I_AS
T_J T_STG
Parameter
Continuous Drain Current, V_GS @ 10V①
Continuous Drain Current, V_GS @ 10V①
Pulsed Drain Current②
Power Dissipation③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.1mH
Avalanche Current @ L=0.1mH
Operating Junction and Storage Temperature Range
Max.
50
40
200
100
0.55
30
± 20
100
44
-55 to + 175
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO., LTD.
2011.11.05
www.silikron.com
Version: 1.0
page 1 of 8