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SSFM1022 Datasheet, PDF (1/9 Pages) Silikron Semiconductor Co.,LTD. – Advanced trench MOSFET process technology | |||
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Main Product Characteristics:
SSFM1022
VDSS
RDS(on)
100V
19mohm
SSSSFFMT31900262
ID
40A
Features and Benefits:
TO220
Marking and pin
 Advanced trench MOSFET process technology
Assignment
 Special designed for PWM, load switching and general purpose applications
 Ultra low on-resistance with low gate charge
 Fast switching and reverse body recovery
 175â operating temperature
Schematic diagram
Description:
It utilizes the latest FRRMOS (fast reverse recovery MOS) trench processing techniques to achieve
extremely low on resistance, fast switching speed and short reverse recovery time. These features
combine to make this design an extremely efficient and reliable device for use in PWM, load switching
and a wide variety of other applications
Absolute max Rating:
Symbol
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10Vâ
ID @ TC = 100°C Continuous Drain Current, VGS @ 10Vâ
IDM
ISM
PD @TC = 25°C
PD @TC =100°C
Pulsed Drain Currentâ¡
Pulsed Source Current (Body Diode)â¡
Power Dissipationâ¢
Power Dissipationâ¢
VDS
Drain-Source Voltage
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.1mHâ¡
Avalanche Current @ L=0.1mHâ¡
TJ TSTG
Operating Junction and Storage Temperature
Range
Max.
40
36
160
160
3.2
2
100
± 25
42
29
-55 to + 175
Units
A
W
W
V
V
mJ
A
°C
Thermal Resistance
Symbol
RθJC
RθJA
Characterizes
Junction-to-caseâ¢
Junction-to-ambient (t ⤠10s) â£
Junction-to-Ambient (PCB mounted, steady-state) â£
Value
16
32
60
Unit
â/W
â/W
â/W
©Silikron Semiconductor CO.,LTD.
2010.12.14 Version : 1.0 preliminary page 1of9
www.silikron.com
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