SSFD6046 Datasheet, PDF (1/4 Pages) Silikron Semiconductor Co.,LTD. – Advanced trench process technology

Feathers:
„ Advanced trench process technology
„ avalanche energy, 100% test
„ Fully characterized avalanche voltage and current
SSFD6046
ID =12A
BV=60V
Rdson=50mΩ（max.）
Description:
The SSFD6046 is a new generation of middle voltage
N–Channel enhancement mode trench power MOSFET. This
new technology increases the device reliability and electrical
parameter repeatability. SSFD6046 is assembled in high
reliability and qualified assembly house.
SSFD6046
TOP View (TO252)
Marking and pin Assignment
Absolute Maximum Ratings
Parameter
I_D@T_c=25ْ C Continuous drain current,VGS@10V
I_D@T_c=100ْC
I_DM
Continuous drain current,VGS@10V
Pulsed drain current ①
P_D@T_C=25ْC
Power dissipation
Linear derating factor
V_GS
E_AS
E_AR
T_J
T_STG
Gate-to-Source voltage
Single pulse avalanche energy ②
Repetitive avalanche energy
Operating Junction and
Storage Temperature Range
Max.
12
9
30
20
0.12
±20
8
TBD
–55 to +175
Units
A
W
W/ْ C
V
mJ
ْC
Thermal Resistance
Parameter
R_θJC
Junction-to-case
R_θJA
Junction-to-ambient
Min.
Typ.
Max.
—
—
7.5
—
—
60
Units
ْC/W
Electrical Characteristics @TJ=25 ْC (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BV_DSS Drain-to-Source breakdown voltage 60 — — V
R_DS(on) Static Drain-to-Source on-resistance — 46 50 mΩ
V_GS(th)
Gate threshold voltage
1.0
3.0 V
g_fs
Forward transconductance
— 15 — S
—— 1
I_DSS Drain-to-Source leakage current
μA
— — 10
Gate-to-Source forward leakage
I_GSS
Gate-to-Source reverse leakage
©Silikron Semiconductor Corporation
— — 100
nA
— — -100
2010.09.01
Test Conditions
V_GS=0V,I_D=250μA
V_GS=10V,I_D=12A
V_DS=V_GS,I_D=250μA
V_DS=5V,I_D=12A
V_DS=60V,V_GS=0V
V_DS=60V,
V_GS=0V,T_J=55ْC
V_GS=20V
V_GS=-20V
Version: 1.1
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