SSFD6035 Datasheet, PDF (1/7 Pages) Silikron Semiconductor Co.,LTD. – High Power and current handing capability

SSFD6035
DESCRIPTION
The SSFD6035 uses advanced trench
technology to provide excellent R_DS(ON)
and low gate charge .This device is
suitable for use as a load switch or in
PWM applications.
GENERAL FEATURES
● V_DS =- 60V,I_D =-26A
R_DS(ON) < 40mΩ @ V_GS=-10V
R_DS(ON) < 55mΩ @ V_GS=-4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
D
G
S
Schematic diagram
Marking and pin Assignment
Application
●PWM applications
●Load switch
●Power management
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
SSFD6035
SSFD6035
DPAK
-
Tape width
-
Quantity
-
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
I_D(25℃)
Drain Current-Continuous@ Current-Pulsed (Note 1)
I_D(70℃)
I_DM
Maximum Power Dissipation
P_D
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
-60
±20
-26
-20
-60
60
-55 To 175
Unit
V
V
A
A
A
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
R_θJA
25
℃/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV_DSS
V_GS=0V I_D=-250μA
Min Typ Max Unit
-60
V
©Silikron Semiconductor CO.,LTD.
1
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