SSFD4024 Datasheet, PDF (1/4 Pages) Silikron Semiconductor Co.,LTD. – Advanced trench MOSFET process technology

Main Product Characteristics:
SSFD4024
V_DSS
40V
R_DS(on)
30 mohm
I_D
12A
Features and Benefits:
„ Advanced trench MOSFET process technology
„ Special designed for Convertors and power controls
„ Ultra low on-resistance
„ 175℃ operating temperature
TO-252 top view
SSFD4024
Marking and pin Assignment
Description:
It utilizes the latest trench processing techniques to achieve extremely low on resistance, fast switching speed and
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety of other applications
Absolute max Rating:
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current①
Power Dissipation
Gate-to-Source Voltage
Single Pulse Avalanche Energy②
Avalanche Current @ L=0.3mH
Operating Junction and Storage Temperature Range
Max.
12
12
30
20
± 20
22
10
-55 to + 175
Units
A
W
V
mJ
A
°C
Thermal Resistance
Symbol
R_θJC
R_θJA
Characterizes
Junction-to-case
Junction-to-ambient
Junction-to-Ambient (PCB mounted, steady-state)
©Silikron Semiconductor CO.,LTD.
2010.09.01
www.silikron.com
Version : 1.0
Value
7.5
30
60
Unit
℃/W
℃/W
℃/W
page 1of4