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SSF8N65 Datasheet, PDF (1/6 Pages) Silikron Semiconductor Co.,LTD. – Extremely high dv/dt capability | |||
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SSF8N65
Features
â Extremely high dv/dt capability
â Low Gate Charge Qg results in Simple Drive Requirement
â 100% avalanche tested
â Gate charge minimized
â Very low intrinsic capacitances
â Very good manufacturing repeatability
Description
The SSF8N65 is a new generation of high voltage
NâChannel enhancement mode power MOSFETs and is
obtained through an extreme optimization layout design, in
additional to pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt capability, provide
superior switching performance, withstand high energy pulse in
the avalanche, and increases packing density.
Application
â High current, high speed switching
â Ideal for off-line power supply, adaptor, PFC
VDSS = 650V
ID = 8A
Rdson = 0.95Ω (typ.)
SSF8N65 TOP View (TO220)
Absolute Maximum Ratings
Parameter
ID@Tc=25 ÙC Continuous Drain Current,VGS@10V
ID@Tc=100ÙC Continuous Drain Current,VGS@10V
IDM
Pulsed Drain Current â
PD@TC=25ÙC
Power Dissipation
Linear derating Factor
VGS
Gate-to-Source Voltage
EAS
Single Pulse Avalanche Energy â¡
IAR
Avalanche Current â
EAR
Repetitive Avalanche Energy â
dv/dt
Peak Diode Recovery dv/dt â¢
TJ
Operating Junction and
TSTG
Storage Temperature Range
Max.
8.2
5.5
32.8
145
0.8
±30
586
4
15
4.5
â55 to +150
Thermal Resistance
Parameter
Min.
RθJC
Junction-to-case
â
RθCS
Case-to-Sink,Flat,Greased Surface
â
RθJA
Junction-to-Ambient
â
Typ.
Max.
â
0.86
0.50
â
â
62.5
Units
A
W
W/ CÙ
V
mJ
A
mJ
V/ns
ÙC
Units
ÙC/W
©Silikron Semiconductor Corporation
2010.1.10
Version: 1.0
page 1of6
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