SSF8N60 Datasheet, PDF (1/6 Pages) Silikron Semiconductor Co.,LTD. – Extremely high dv/dt capability

SSF8N60
Features
■ Extremely high dv/dt capability
■ Low Gate Charge Qg results in Simple Drive Requirement
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatability
Description
The SSF8N60 is a new generation of high voltage
N–Channel enhancement mode power MOSFETs and is
obtained through an extreme optimization layout design, in
additional to pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt capability, provide
superior switching performance, withstand high energy pulse in
the avalanche, and increases packing density.
Application
■ High current, high speed switching
■ Ideal for off-line power supply, adaptor, PFC
VDSS = 600V
ID = 8A
Rdson = 0.85Ω (typ.)
SSF8N60 TOP View (TO220)
Absolute Maximum Ratings
Parameter
ID@Tc=25 ْC Continuous Drain Current,VGS@10V
ID@Tc=100ْC Continuous Drain Current,VGS@10V
IDM
Pulsed Drain Current ①
PD@TC=25ْC
Power Dissipation
Linear derating Factor
VGS
Gate-to-Source Voltage
EAS
Single Pulse Avalanche Energy ②
IAR
Avalanche Current ①
EAR
Repetitive Avalanche Energy ①
dv/dt
Peak Diode Recovery dv/dt ③
TJ
Operating Junction and
TSTG
Storage Temperature Range
Max.
8.2
5.5
32.8
145
0.8
±30
586
4
15
4.5
–55 to +150
Thermal Resistance
Parameter
Min.
RθJC
Junction-to-case
—
RθCS
Case-to-Sink,Flat,Greased Surface
—
RθJA
Junction-to-Ambient
—
Typ.
Max.
—
0.86
0.50
—
—
62.5
Units
A
W
W/ Cْ
V
mJ
A
mJ
V/ns
ْC
Units
ْC/W
©Silikron Semiconductor Corporation
2010.1.10
Version: 1.0
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