SSF8521 Datasheet, PDF (1/5 Pages) Silikron Semiconductor Co.,LTD. – DC-DC conversion applications

DESCRIPTION
The SSF8521 uses advanced trench technology to
provide excellent R_DS(ON) and low gate charge . A
Schottky diode is provided to facilitate the
implementation of a bidirectional blocking switch,
or for DC-DC conversion applications.
GENERAL FEATURES
● MOSFET
V_DS = -20V,I_D = -4.4A
R_DS(ON) < 170mΩ @ V_GS=-1.8V
R_DS(ON) < 110mΩ @ V_GS=-2.5V
R_DS(ON) < 80mΩ @ V_GS=-4.5V
SCHOTTKY
V_R = 20V, I_F = 4.1A, V_F<0.575V @ 1.0A
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
SSF8521
Schematic diagram
Marking and pin Assignment
Application
●DC-DC conversion applications
●Load switch
●Power management
DFN3X2-8L Bottom View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
8521
SSF8521
DFN3X2-8L
－
Tape width
－
Quantity
－
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
MOSFET
Drain-Source Voltage
VDS
-20
Gate-Source Voltage
VGS
±8
I_D
-4.4
Drain Current-Continuous@ Current-Pulsed (Note 1)
I_DM
-13
Schottky reverse voltage
V_R
Continuous Forward Current
I_F
Maximum Power Dissipation
P_D
2.1
Operating Junction and Storage Temperature Range T_J,T_STG
-55 To 150
Schottky
20
4.1
-55 To 150
Unit
V
V
A
A
V
A
W
℃
THERMAL CHARACTERISTICS
©Silikron Semiconductor CO.,LTD
2008.12.1
Version : 1.1
page 1 of 5
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