SSF7NS65UD Datasheet, PDF (1/8 Pages) Silikron Semiconductor Co.,LTD. – High dv/dt and avalanche capabilities

Main Product Characteristics
V_DSS
650V
R_DS(on) 0.65Ω (typ.)
I_D
7A ①
Features and Benefits
TO-252 (DPAK)
 High dv/dt and avalanche capabilities
 100% avalanche tested
 Low input capacitance and gate charge
 Low gate input resistance
SSF7NS65UD
Marking and Pin
Assignment
Schematic Diagram
Description
The SSF7NS65UD series MOSFETs is a new technology, which combines an innovative technology
and advance process. This new technology achieves low Rdson, energy saving, high reliability and
uniformity, superior power density and space saving.
Absolute Max Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current ②
Power Dissipation ③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=100mH
Avalanche Current @ L=100mH
Operating Junction and Storage Temperature Range
Max.
7①
5①
28
42
0.33
650
± 30
480
3.1
-55 to +150
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2013.08.27
www.silikron.com
Version : 1.0
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