SSF7NS65G Datasheet, PDF (1/8 Pages) Silikron Semiconductor Co.,LTD. – High dv/dt and avalanche capabilities

Main Product Characteristics:
V_DSS
R_DS(on)
650V
0.58Ω (typ.)
I_D
7A ①
Features and Benefits:
Feathers:
 High dv/dt and avalanche capabilities
 100% avalanche tested
 Low input capacitance and gate charge
 Low gate input resistance
TO-251
SSF7NS65G
Marking and pin
Assignment
Schematic diagram
Description:
The SSF7NS65G series MOSFETs is a new technology, which combines an innovative super junction
technology and advance process. This new technology achieves low Rdson, energy saving, high
reliability and uniformity, superior power density and space saving.
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAR
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current ②
Power Dissipation ③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=15.2mH
Avalanche Current @ L=15.2mH
Operating Junction and Storage Temperature Range
Max.
7①
5①
28
83
0.67
650
± 30
68
3
-55 to +150
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2012.07.06
www.silikron.com
Version : 1.2
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