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SSF7510 Datasheet, PDF (1/5 Pages) Silikron Semiconductor Co.,LTD. – Power switching application | |||
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SSF7510
Feathers:
 Advanced trench process technology
 Special designed for Convertors and power controls
 High density cell design for ultra low Rdson
 Fully characterized Avalanche voltage and current
 Avalanche Energy 100% test
Description:
The SSF7510 is a new generation of middle voltage and
high current NâChannel enhancement mode trench power
MOSFET. This new technology increases the cell density
and reduces the on-resistance; its typical Rdson can reduce
to 6.8mohm.
Application:
 Power switching application
ID=75A
BV=75V
Rdson=10mohm
Absolute Maximum Ratings
Parameter
ID@Tc=25Ù C Continuous drain current,VGS@10V
ID@Tc=100ÙC
IDM
Continuous drain current,VGS@10V
Pulsed drain current â
PD@TC=25ÙC
Power dissipation
Linear derating factor
VGS
dv/dt
Gate-to-Source voltage
Peak diode recovery voltage
EAS
EAR
TJ
TSTG
Single pulse avalanche energy â¡
Repetitive avalanche energy
Operating Junction and
Storage Temperature Range
SSF7510 TOP View (TO220)
Max.
75
70
300
150
2.0
±20
31
480
TBD
â55 to +150
Units
A
W
W/Ù C
V
v/ns
mJ
ÙC
Thermal Resistance
Parameter
Min.
Typ.
Max.
Units
RθJC
Junction-to-case
RθJA
Junction-to-ambient
â
0.83
â
â
â
62
ÙC/W
Electrical Characteristics @TJ=25 ÙC(unless otherwise specified)
Parameter
Min. Typ. Max. Units
Test Conditions
BVDSS
RDS(on)
Drain-to-Source breakdown voltage 75 â
âV
Static Drain-to-Source on-resistance â 0.007 0.01 â¦
VGS=0V,ID=250μA
VGS=10V,ID=40A
VGS(th)
Gate threshold voltage
2.0 2.7 4.0 V
VDS=VGS,ID=250μA
gfs
Forward transconductance
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
©Silikron Semiconductor CO.,LTD.
2008.8.1
- 58 â S
VDS=5V,ID=30A
ââ
1
VDS=75V,VGS=0V
ââ
μA
10
VDS=75V,
VGS=0V,TJ=150ÙC
â â 100 nA VGS=20V
Version : 1.0
page 1of5
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