SSF7509 Datasheet, PDF (1/5 Pages) Silikron Semiconductor Co.,LTD. – Power switching application

SSF7509
Feathers:
„ Advanced trench process technology
„ Special designed for Convertors and power controls
„ High density cell design for ultra low Rdson
„ Fully characterized Avalanche voltage and current
„ Avalanche Energy 100% test
Description:
The SSF7509 is a new generation of middle voltage and
high current N–Channel enhancement mode trench power
MOSFET. This new technology increases the cell density
and reduces the on-resistance; its typical Rdson can reduce
to 6.2mohm.
Application:
„ Power switching application
ID=80A
BV=80V
Rdson=8mohm
Absolute Maximum Ratings
Parameter
I_D@T_c=25 ْC Continuous drain current,VGS@10V
I_D@T_c=100ْC
I_DM
Continuous drain current,VGS@10V
Pulsed drain current ①
P_D@T_C=25ْC
Power dissipation
Linear derating factor
V_GS
dv/dt
Gate-to-Source voltage
Peak diode recovery voltage
E_AS
E_AR
T_J
T_STG
Single pulse avalanche energy ②
Repetitive avalanche energy
Operating Junction and
Storage Temperature Range
SSF7509 TOP View (TO220)
Max.
80
72
320
165
2.0
±20
31
500
TBD
–55 to +150
Units
A
W
W/ ْC
V
v/ns
mJ
ْC
Thermal Resistance
Parameter
Min.
Typ.
Max.
R_θJC
Junction-to-case
—
0.75
—
R_θJA
Junction-to-ambient
—
—
62
Electrical Characteristics @TJ=25 ْC(unless otherwise specified)
Parameter
Min. Typ. Max. Units
BV_DSS
R_DS(on)
Drain-to-Source breakdown voltage 80 —
—V
Static Drain-to-Source on-resistance — 0.0067 0.008 Ω
V_GS(th)
Gate threshold voltage
2.0
4.0 V
g_fs
Forward transconductance
- 58 — S
——
2
I_DSS
Drain-to-Source leakage current
——
μA
10
I_GSS
Gate-to-Source forward leakage
©Silikron Semiconductor CO.,LTD.
2008.8.1
— — 100 nA
Version : 1.0
Units
ْC/W
Test Conditions
V_GS=0V,I_D=250μA
V_GS=10V,I_D=40A
V_DS=V_GS,I_D=250μA
V_DS=5V,I_D=30A
V_DS=80V,V_GS=0V
V_DS=80V,
V_GS=0V,T_J=150ْC
V_GS=20V
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