SSF7504A Datasheet, PDF (1/5 Pages) Silikron Semiconductor Co.,LTD. – Advanced trench process technology

SSF7504A
Feathers:
„ Advanced trench process technology
„ Special designed for Convertors and power controls
„ High density cell design for ultra low Rdson
„ Fully characterized Avalanche voltage and current
„ Avalanche Energy 100% test
Description:
The SSF7504A is a new generation of middle voltage and
high current N–Channel enhancement mode trench power
MOSFET. This new technology increases the cell density
and reduces the on-resistance; its typical Rdson can reduce
to 2.7mohm.
Application:
„ Power switching application
ID=220A
BV=75V
Rdson=2.7mΩ(typ.)
SSF7504A TOP View (TO-263)
Absolute Maximum Ratings
Parameter
I_D@T_c=25ْ C Continuous drain current,VGS@10V
I_D@T_c=100ْC
I_DM
Continuous drain current,VGS@10V
Pulsed drain current ①
P_D@T_C=25ْC Power dissipation
Linear derating factor
V_GS
dv/dt
Gate-to-Source voltage
Peak diode recovery voltage
E_AS
E_AR
T_J
T_STG
Single pulse avalanche energy ②
Repetitive avalanche energy
Operating Junction and
Storage Temperature Range
Max.
220
170
880
370
2.0
±20
20
960
TBD
–55 to +175
Units
A
W
W/ْ C
V
v/ns
mJ
ْC
Thermal Resistance
Parameter
R_θJC
Junction-to-case
R_θJA
Junction-to-ambient
Min.
Typ.
Max.
—
0.41
—
—
—
62
Units
ْC/W
Electrical Characteristics @TJ=25 ْC(unless otherwise specified)
Parameter
Min. Typ. Max. Units
BV_DSS
R_DS(on)
V_GS(th)
g_fs
I_DSS
Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
Forward transconductance
Drain-to-Source leakage current
75 —
— 2.7
2.0 3.1
— 65
——
——
—V
4 mΩ
4.0 V
—S
10
μA
50
©Silikron Semiconductor CO.,LTD.
2010.5.2
Version : 1.0
Test Conditions
V_GS=0V,I_D=250μA
V_GS=10V,I_D=40A
V_DS=V_GS,I_D=250μA
V_DS=5V,I_D=30A
V_DS=80V,V_GS=0V
V_DS=80V,
V_GS=0V,T_J=150ْC
page 1of5