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SSF7504 Datasheet, PDF (1/5 Pages) Silikron Semiconductor Co.,LTD. – Advanced trench process technology | |||
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SSF7504
Feathers:
 Advanced trench process technology
 Special designed for Convertors and power controls
 High density cell design for ultra low Rdson
 Fully characterized Avalanche voltage and current
 Avalanche Energy 100% test
Description:
The SSF7504 is a new generation of middle voltage and
high current NâChannel enhancement mode trench power
MOSFET. This new technology increases the cell density
and reduces the on-resistance; its typical Rdson can reduce
to 2.7mohm.
Application:
 Power switching application
ID=220A
BV=75V
Rdson=2.7mâ¦(typ.)
SSF7504 TOP View (TO220)
Absolute Maximum Ratings
Parameter
ID@Tc=25Ù C Continuous drain current,VGS@10V
ID@Tc=100ÙC
IDM
Continuous drain current,VGS@10V
Pulsed drain current â
PD@TC=25ÙC Power dissipation
Linear derating factor
VGS
dv/dt
Gate-to-Source voltage
Peak diode recovery voltage
EAS
EAR
TJ
TSTG
Single pulse avalanche energy â¡
Repetitive avalanche energy
Operating Junction and
Storage Temperature Range
Max.
220
170
880
370
2.0
±20
20
960
TBD
â55 to +175
Units
A
W
W/Ù C
V
v/ns
mJ
ÙC
Thermal Resistance
Parameter
RθJC
Junction-to-case
RθJA
Junction-to-ambient
Min.
Typ.
Max.
â
0.41
â
â
â
62
Units
ÙC/W
Electrical Characteristics @TJ=25Ù C(unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source breakdown voltage
75 â
âV
RDS(on)
Static Drain-to-Source on-resistance
â 2.7
4 mâ¦
VGS(th)
Gate threshold voltage
2.0 3.1 4.0 V
gfs
Forward transconductance
â 65 â S
â â 10
IDSS
Drain-to-Source leakage current
μA
â â 50
©Silikron Semiconductor CO.,LTD.
2010.5.2
Version : 1.0
Test Conditions
VGS=0V,ID=250μA
VGS=10V,ID=40A
VDS=VGS,ID=250μA
VDS=5V,ID=30A
VDS=80V,VGS=0V
VDS=80V,
VGS=0V,TJ=150ÙC
page 1of5
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