SSF6NS70G Datasheet, PDF (1/10 Pages) Silikron Semiconductor Co.,LTD. – High dv/dt and avalanche capabilities

Main Product Characteristics:
V_DSS
700V
R_DS(on) 1.2Ω (typ.)
I_D
5.2A ①
Features and Benefits:
TO-251
SSF6NS70G
Feathers:
 High dv/dt and avalanche capabilities
 100% avalanche tested
 Low input capacitance and gate charge
 Low gate input resistance
SSF6NS70G/D/F
TO-252
SSF6NS70D
TO-220F
Schematic diagram
SSF6NS70F
Description:
The SSF6NS70G/D/F series MOSFETs is a new technology, which combines an innovative technology
and advance process. This new technology achieves low Rdson, energy saving, high reliability and
uniformity, superior power density and space saving.
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAR
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current ②
Power Dissipation ③
For TO-251/TO-252 package
For TO-220F package
Linear Derating Factor
For TO-251/TO-252 package
For TO-220F package
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=22.4mH
Avalanche Current @ L=22.4mH
Operating Junction and Storage Temperature Range
Max.
5.2 ①
3.2①
15.6
50
31.2
0.4
0.25
700
± 30
54
2.2
-55 to +150
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2012.11.16
www.silikron.com
Version : 1.0
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