SSF6N60G Datasheet, PDF (1/8 Pages) Silikron Semiconductor Co.,LTD. – Advanced MOSFET process technology

Main Product Characteristics:
V_DSS
600V
R_DS(on) 1.32Ω (typ.)
I_D
6A
Features and Benefits:
TO-251
 Advanced MOSFET process technology
 Special designed for PWM, load switching and
general purpose applications
 Ultra low on-resistance with low gate charge
 Fast switching and reverse body recovery
 150℃ operating temperature
SSF6N60G
Marking and pin
Assignment
Schematic diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V①
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
Power Dissipation③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=30mH
Avalanche Current @ L=30mH
Operating Junction and Storage Temperature Range
Max.
6
3.8
24
125
1.00
600
± 30
421
5.3
-55 to +150
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2012.09.25
www.silikron.com
Version : 1.1
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