SSF6816 Datasheet, PDF (1/5 Pages) Silikron Semiconductor Co.,LTD. – High Power and current handing capability

SSF6816
DESCRIPTION
The SSF6816 uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and
operation with gate voltages as low as 2.5V while
retaining a 12V V_GS(MAX) rating. It is ESD protected.
This device is suitable for use as a uni-directional
or bi-directional load switch, facilitated by its
common-drain configuration.
GENERAL FEATURES
● V_DS = 30V,I_D = 8A
R_DS(ON) < 30mΩ @ V_GS=2.5V
R_DS(ON) < 24mΩ @ V_GS=3.1V
R_DS(ON) < 22mΩ @ V_GS=4.0V
R_DS(ON) < 20mΩ @ V_GS=4.5V
R_DS(ON) < 17mΩ @ V_GS=10V
ESD Rating：2000V HBM
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Schematic diagram
Marking and pin Assignment
DFN2×5-6L top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
6816
SSF6816
DFN2×5-6L
Tape width
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
I_D
Drain Current-Continuous@ Current-Pulsed (Note 1)
I_DM
Maximum Power Dissipation
P_D
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
30
±12
8
45
1.7
-55 To 150
Unit
V
V
A
A
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
R_θJA
40
℃ /W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV_DSS
V_GS=0V I_D=250μA
Zero Gate Voltage Drain Current
I_DSS
V_DS=30V,V_GS=0V
Min Typ Max Unit
30
V
1
μA
©Silikron Semiconductor CO.,LTD.
1
http://www.silikron.com
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