SSF6814 Datasheet, PDF (1/5 Pages) Silikron Semiconductor Co.,LTD. – Advanced trench process technology

SSF6814
Feathers:
 Advanced trench process technology
 avalanche energy, 100% test
 Fully characterized avalanche voltage and current
ID =60A
BV=68V
Rdson=14mΩ（max.）
Description:
The SSF6814 is a new generation of middle voltage and high
current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SSF6814 is assembled
in high reliability and qualified assembly house.
Application:
 Power switching application
Absolute Maximum Ratings
Parameter
I_D@T_c=25 ْC
Continuous drain current,VGS@10V
I_D@T_c=100ْC
I_DM
Continuous drain current,VGS@10V
Pulsed drain current ①
P_D@T_C=25ْC
Power dissipation
Linear derating factor
V_GS
Gate-to-Source voltage
E_AS
Single pulse avalanche energy ②
E_AR
Repetitive avalanche energy
T_J
T_STG
Operating Junction and
Storage Temperature Range
SSF6814 TOP View (TO220)
Max.
60
42
240
108
0.74
±20
154
TBD
–55 to +175
Units
A
W
W/ Cْ
V
mJ
ْC
Thermal Resistance
Parameter
R_θJC
R_θJA
Junction-to-case
Junction-to-ambient
Min.
—
—
Typ.
1.39
—
Max.
—
62
Units
ْC/W
Electrical Characteristics @TJ=25 ْC (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BV_DSS Drain-to-Source breakdown voltage 68 — — V
R_DS(on) Static Drain-to-Source on-resistance — 12 14 mΩ
V_GS(th)
Gate threshold voltage
2.0
4.0 V
g_fs
Forward transconductance
— 60 — S
—— 2
I_DSS
Drain-to-Source leakage current
μA
— — 10
Gate-to-Source forward leakage
I_GSS
Gate-to-Source reverse leakage
©Silikron Semiconductor Corporation
— — 100
nA
— — -100
2010.08.27
Test Conditions
V_GS=0V,I_D=250μA
V_GS=10V,I_D=30A
V_DS=V_GS,I_D=250μA
V_DS=5V,I_D=30A
V_DS=68V,V_GS=0V
V_DS=68V,
V_GS=0V,T_J=150ْC
V_GS=20V
V_GS=-20V
Version: 2.2
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