SSF6808A Datasheet, PDF (1/5 Pages) Silikron Semiconductor Co.,LTD. – Advanced trench process technology

SSF6808A
Feathers:
 Advanced trench process technology
 Ultra low Rdson, typical 5mohm
 High avalanche energy, 100% test
 Fully characterized avalanche voltage and current
Description:
The SSF6808A is a new generation of middle voltage and
high current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SSF6808A is
assembled in high reliability and qualified assembly house.
Application:
 Power switching application
ID =84A
BV=68V
Rdson=8mohm
SSF6808A TOP View (TO-263)
Absolute Maximum Ratings
Parameter
I_D@T_c=25 ْC
Continuous drain current,VGS@10V
I_D@T_c=100ْC
I_DM
Continuous drain current,VGS@10V
Pulsed drain current ①
P_D@T_C=25ْC
Power dissipation
Linear derating factor
V_GS
Gate-to-Source voltage
dv/dt
Peak diode recovery voltage
E_AS
Single pulse avalanche energy ②
E_AR
Repetitive avalanche energy
T_J
T_STG
Operating Junction and
Storage Temperature Range
Max.
84
76
310
180
1.5
±20
31
400
TBD
–55 to +175
Units
A
W
W/ Cْ
V
v/ns
mJ
ْC
Thermal Resistance
Parameter
R_θJC
Junction-to-case
R_θJA
Junction-to-ambient
Min.
—
—
Typ.
0.83
—
Max.
—
62
Units
ْC/W
Electrical Characteristics @TJ=25 ْC (unless otherwise specified)
Parameter
Min. Typ.
BV_DSS
R_DS(on)
V_GS(th)
Drain-to-Source breakdown voltage 68 —
Static Drain-to-Source on-resistance — 5
Gate threshold voltage
2.0
——
I_DSS
Drain-to-Source leakage current
——
©Silikron Semiconductor Corporation
2008.8.1
Max. Units
Test Conditions
—V
8 mΩ
4.0 V
2
μA
10
V_GS=0V,I_D=250μA
V_GS=10V,I_D=30A
V_DS=V_GS,I_D=250μA
V_DS=68V,V_GS=0V
V_DS=68V,
V_GS=0V,T_J=150ْC
Version: 1.1
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