SSF6808 Datasheet, PDF (1/5 Pages) Silikron Semiconductor Co.,LTD. – Power switching application

SSF6808
Feathers:
ID =110A
„ Advanced trench process technology
BV=55V
„ Ultra low Rdson, typical 6mohm
Rdson=8mohm
„ High avalanche energy, 100% test
„ Fully characterized avalanche voltage and current
Description:
The SSF6808 is a new generation of middle voltage and high
current N–Channel enhancement mode trench power
SSF6808 TOP View (TO220)
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SSF6808 is assembled
in high reliability and qualified assembly house.
Application:
„ Power switching application
Absolute Maximum Ratings
Parameter
Max.
I_D@T_c=25ْ C Continuous drain current,VGS@10V
110
I_D@T_c=100ْC Continuous drain current,VGS@10V
80
I_DM
Pulsed drain current ①
400
P_D@T_C=25ْC
Power dissipation
150
Linear derating factor
2.0
V_GS
Gate-to-Source voltage
±20
dv/dt
Peak diode recovery voltage
31
E_AS
Single pulse avalanche energy ②
E_AR
Repetitive avalanche energy
480
TBD
T_J
T_STG
Operating Junction and
Storage Temperature Range
–55 to +150
Thermal Resistance
Parameter
Min.
Typ.
Max.
R_θJC
Junction-to-case
—
0.83
—
R_θJA
Junction-to-ambient
—
—
62
Electrical Characteristics @TJ=25 ْC(unless otherwise specified)
Parameter
Min. Typ. Max. Units
BV_DSS
R_DS(on)
V_GS(th)
g_fs
Drain-to-Source breakdown voltage 55 —
Static Drain-to-Source on-resistance — 6
Gate threshold voltage
2.0 3
Forward transconductance
- 58
——
—V
8 mΩ
4.0 V
—S
1
I_DSS
Drain-to-Source leakage current
μA
— — 10
I_GSS
Gate-to-Source forward leakage
©Silikron Semiconductor CO.,LTD.
2008.8.1
— — 100 nA
Version : 1.0
Units
A
W
W/ْ C
V
v/ns
mJ
ْC
Units
ْC/W
Test Conditions
V_GS=0V,I_D=250μA
V_GS=10V,I_D=68A
V_DS=V_GS,I_D=250μA
V_DS=5V,I_D=30A
V_DS=55V,V_GS=0V
V_DS=55V,
V_GS=0V,T_J=150ْC
V_GS=20V
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