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SSF6807 Datasheet, PDF (1/5 Pages) Silikron Semiconductor Co.,LTD. – Power switching application | |||
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SSF6807
Feathers:
 Advanced trench process technology
 avalanche energy, 100% test
ID =84A
BV=60V
Rdson=0.008â¦
 Fully characterized avalanche voltage and current
Description:
The SSF6807 is a new generation of high voltage and low
current NâChannel enhancement mode trench power
MOSFET. This new technology increases the device reliability
SSF6807 TOP View (T0-220)
and electrical parameter repeatability. SSF6807 is assembled
in high reliability and qualified assembly house.
Application:
 Power switching application
Absolute Maximum Ratings
Parameter
ID@Tc=25 ÙC Continuous drain current,VGS@10V
ID@Tc=100ÙC
IDM
Continuous drain current,VGS@10V
Pulsed drain current â
PD@TC=25ÙC
Power dissipation
Linear derating factor
VGS
EAS
EAR
dv/dt
Gate-to-Source voltage
Single pulse avalanche energy â¡
Repetitive avalanche energy
Peak diode recovery voltage
TJ
TSTG
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
Min.
RθJC
Junction-to-case
â
RθJA
Junction-to-ambient
â
Max.
84
76
310
150
1.5
±20
400
TBD
31
â55 to +150
Typ.
Max.
0.83
â
â
62
Units
A
W
W/ ÙC
V
mJ
mJ
v/ns
ÙC
Units
ÙC/W
Electrical Characteristics @TJ=25 ÙC(unless otherwise specified)
Parameter
Min. Typ. Max. Units
Test Conditions
BVDSS Drain-to-Source breakdown voltage
RDS(on) Static Drain-to-Source on-resistance
VGS(th)
Gate threshold voltage
IDSS Drain-to-Source leakage current
Gate-to-Source forward leakage
IGSS Gate-to-Source reverse leakage
60 â
â
â 0.0057 0.008
2.0 â 4.0
ââ
2
â â 10
â â 100
â â -100
V VGS=0V,ID=250μA
⦠VGS=10V,ID=30A
V VDS=VGS,ID=250μA
VDS=60V,VGS=0V
μA VDS=60V,
VGS=0V,TJ=150ÙC
nA VGS=20V
VGS=-20V
©Silikron Semiconductor CO.,LTD.
2009.7.10
Version : 1.0
page 1of5
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