SSF6670 Datasheet, PDF (1/7 Pages) Silikron Semiconductor Co.,LTD. – PWM applications

SSF6670
DESCRIPTION
The SSF6670 uses advanced trench
technology to provide excellent R_DS(ON)
and low gate charge .
GENERAL FEATURES
● V_DS = 60V,I_D =3.5A
R_DS(ON) <120mΩ @ V_GS=4.5V
R_DS(ON) <90mΩ @ V_GS=10V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Schematic diagram
Marking and pin Assignment
Application
●PWM applications
●Load switch
●Power management
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
SSF6670
SSF6670
SOP-8
Ø330mm
SOP-8 top view
Tape width
12mm
Quantity
2500 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
I_D(25℃)
Drain Current-Continuous@ Current-Pulsed (Note 1)
I_D(70℃)
I_DM
Maximum Power Dissipation
P_D
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
60
±25
3.5
2.8
20
2.0
-55 To 150
Unit
V
V
A
A
A
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
R_θJA
62.5
℃/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV_DSS
V_GS=0V I_D=250μA
Min Typ Max
60
Unit
V
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1
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