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SSF6646 Datasheet, PDF (1/5 Pages) Silikron Semiconductor Co.,LTD. – High Power and current handing capability | |||
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SSF6646
DESCRIPTION
The SSF6646 uses advanced trench
technology to provide excellent RDS(ON)
and low gate charge .
GENERAL FEATURES
â VDS = 60V,ID =4.5A
RDS(ON) <75mΩ @ VGS=4.5V
RDS(ON) <60mΩ @ VGS=10V
â High Power and current handing capability
â Lead free product is acquired
â Surface Mount Package
Schematic diagram
Marking and pin Assignment
Application
âPWM applications
âLoad switch
âPower management
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
SSF6646
SSF6646
SOP-8
Ã330mm
SOP-8 top view
Tape width
12mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25âunless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
ID(25â)
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID(70â)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
60
±20
5
4.3
25
2.4
-55 To 175
Unit
V
V
A
A
A
W
â
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
62.5
â/W
ELECTRICAL CHARACTERISTICS (TA=25âunless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Min Typ Max
60
Unit
V
©Silikron Semiconductor CO.,LTD.
1
http://www.silikron.com
v1.1
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