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| SSF6092G1 Datasheet, PDF (1/7 Pages) Silikron Semiconductor Co.,LTD. – Advanced MOSFET process technology | |||
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Main Product Characteristics:
VDSS
RDS(on)
ID
60V
70mΩ(typ)
2.7A
SOT23
SSF6092G1
Marking and pin
Assignment
Schematic diagram
Features and Benefits:
ï® Advanced MOSFET process technology
ï® Special designed for PWM, load switching and
general purpose applications
ï® Ultra low on-resistance with low gate charge
ï® Fast switching and reverse body recovery
ï® 150â operating temperature
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications
Absolute max Rating:
Symbol
ID @ TC = 25°C
IDM
PD @TC = 25°C
VDS
VGS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current â¡
Power Dissipation â¢
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Operating Junction and Storage Temperature Range
Max.
2.7 â
10.8
1.25
0.01
60
± 20
-55 to + 150
Units
A
W
W/°C
V
V
°C
©Silikron Semiconductor CO.,LTD.
2012.02.01
www.silikron.com
Version : 1.0
page 1 of 7
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