SSF6072G5 Datasheet, PDF (1/8 Pages) Silikron Semiconductor Co.,LTD. – Advanced MOSFET process technology

Main Product Characteristics:
V_DSS
R_DS(on)
I_D
60V
67mΩ (typ.)
4A
Features and Benefits:
SOT-223
 Advanced MOSFET process technology
 Special designed for DC-DC and DC-AC
converters, load switching and general purpose
applications
 Ultra low on-resistance with low gate charge
 Fast switching and reverse body recovery
 175℃ operating temperature
SSF6072G5
6072 ^SSF6072G5
Marking and pin
Assignment
Schematic diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in DC-DC and DC-AC converters and a wide variety of other applications.
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V①
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
Power Dissipation③
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.3mH
Avalanche Current @ L=0.3mH
Operating Junction and Storage Temperature Range
Max.
4
3
16
3.3
60
± 20
15
10
-55 to +175
Units
A
W
V
V
mJ
A
°C
Thermal Resistance
Symbol
RθJA
Characterizes
Junction-to-ambient (t ≤ 10s) ④
Junction-to-Ambient (PCB mounted, steady-state) ④
Typ.
—
—
Max.
38
35
Units
℃/W
℃/W
©Silikron Semiconductor CO.,LTD.
2012.11.13
www.silikron.com
Version : 1.1
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