SSF6014J8 Datasheet, PDF (1/8 Pages) Silikron Semiconductor Co.,LTD. – Advanced trench MOSFET process technology

Main Product Characteristics:
V_DSS
60V
R_DS(on) 16mΩ (typ.)
ID
22A
Features and Benefits:
DFN3.3x3.3
Bottom view
 Advanced trench MOSFET process technology
 Special designed for PWM, load switching and
general purpose applications
 Ultra low on-resistance with low gate charge
 Fast switching and reverse body recovery
 175℃ operating temperature
SSF6014J8
Pin Assignment
Schematic diagram
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications
Absolute max Rating:
Symbol
ID @ TC = 25℃
IDM
PD @TC = 25℃
VDS
VGS
EAS
IAR
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
Power Dissipation③
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.3mH②
Avalanche Current @ L=0.3mH②
Operating Junction and Storage Temperature Range
Thermal Resistance
Max.
22
88
48
60
± 20
60
20
-55 to + 175
Symbol
RθJC
RθJA
Characterizes
Junction-to-case③
Junction-to-ambient (t ≤ 10s) ④
Typ.
—
—
Max.
3.1
53
Units
A
W
V
V
mJ
A
℃
Units
℃/W
℃/W
©Silikron Semiconductor CO.,LTD.
2015.01.20
www.silikron.com
Version : 1.0
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