SSF6014D Datasheet, PDF (1/8 Pages) Silikron Semiconductor Co.,LTD. – Advanced trench MOSFET process technology

Main Product Characteristics:
V_DSS
60V
R_DS(on) 12mΩ(typ.)
I_D
60A
DPAK
Features and Benefits:
 Advanced trench MOSFET process technology
 Special designed for PWM, load switching and
general purpose applications
 Ultra low on-resistance with low gate charge
 Fast switching and reverse body recovery
 175℃ operating temperature
SSF6014D
Marking and pin
Assignment
Schematic diagram
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute max Rating:
Symbol
I_D @ TC = 25°C
I_D @ TC = 100°C
I_DM
P_D @TC = 25°C
V_DS
V_GS
E_AS
I_AS
T_J T_STG
Parameter
Continuous Drain Current, V_GS @ 10V①
Continuous Drain Current, V_GS @ 10V①
Pulsed Drain Current②
Power Dissipation③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.3mH
Avalanche Current @ L=0.3mH
Operating Junction and Storage Temperature Range
Max.
60
42
240
115
0.74
60
± 20
235
39
-55 to + 175
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2012.02.25
www.silikron.com
Version : 2.2
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