SSF6010 Datasheet, PDF (1/5 Pages) Silikron Semiconductor Co.,LTD. – Power switching application

SSF6010
Feathers:
„ Advanced trench process technology
„ avalanche energy, 100% test
ID =60A
BV=60V
Rdson=10mohm
„ Fully characterized avalanche voltage and current
Description:
The SSF6010 is a new generation of middle voltage and high
current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
SSF6010 TOP View (TO220)
and electrical parameter repeatability. SSF6010 is assembled
in high reliability and qualified assembly house.
Application:
„ Power switching application
Absolute Maximum Ratings
Parameter
Max.
Units
I_D@T_c=25 ْC Continuous drain current,VGS@10V
60
I_D@T_c=100ْC Continuous drain current,VGS@10V
45
A
I_DM
Pulsed drain current ①
240
P_D@T_C=25ْC
Power dissipation
100
W
Linear derating factor
0.74
W/ ْC
V_GS
Gate-to-Source voltage
±20
V
E_AS
Single pulse avalanche energy ②
220
mJ
E_AR
Repetitive avalanche energy
TBD
T_J
Operating Junction and
–55 to +150
ْC
T_STG
Storage Temperature Range
Thermal Resistance
Parameter
Min.
Typ.
Max.
Units
R_θJC
Junction-to-case
R_θJA
Junction-to-ambient
—
1.25
—
—
—
62
ْC/W
Electrical Characteristics @TJ=25 ْC(unless otherwise specified)
Parameter
Min. Typ. Max. Units
Test Conditions
BV_DSS Drain-to-Source breakdown voltage 60
R_DS(on) Static Drain-to-Source on-resistance —
V_GS(th)
Gate threshold voltage
2.0
g_fs
Forward transconductance
-
—
I_DSS
Drain-to-Source leakage current
—
Gate-to-Source forward leakage
—
I_{GSS Gate-to-Source reverse leakage}
—
—— V
V_GS=0V,I_D=250μA
9 10 mΩ
V_GS=10V,I_D=30A
4.0 V
V_DS=V_GS,I_D=250μA
58 — S
V_DS=5V,I_D=30A
—2
V_DS=60V,V_GS=0V
μA
— 10
V_DS=60V,
V_GS=0V,T_J=150ْC
— 100 _nA V_GS=20V
— -100
V_GS=-20V
©Silikron Semiconductor CO.,LTD.
2009.12.15
Version : 1.0
page 1of5