SSF6008 Datasheet, PDF (1/5 Pages) Silikron Semiconductor Co.,LTD. – Power switching application

SSF6008
Feathers:
„ Advanced trench process technology
„ avalanche energy, 100% test
„ Fully characterized avalanche voltage and current
ID =84A
BV=60V
Rdson=8mΩ
Description:
The SSF6008 is a new generation of high voltage and low
current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SSF6008 is assembled
in high reliability and qualified assembly house.
Application:
„ Power switching application
SSF6008TOP View (T0-220)
Absolute Maximum Ratings
Parameter
I_D@T_c=25 ْC Continuous drain current,VGS@10V
I_D@T_c=100ْC
I_DM
Continuous drain current,VGS@10V
Pulsed drain current ①
P_D@T_C=25ْC
Power dissipation
Linear derating factor
V_GS
E_AS
E_AR
dv/dt
Gate-to-Source voltage
Single pulse avalanche energy ②
Repetitive avalanche energy①
Peak diode recovery voltage
T_J
T_STG
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
Min.
R_θJC
Junction-to-case
—
R_θJA
Junction-to-ambient
—
Max.
84
76
310
150
1.5
±20
400
20
30
–55 to +150
Typ.
Max.
0.83
—
—
62
Units
A
W
W/ ْC
V
mJ
mJ
v/ns
ْC
Units
ْC/W
Electrical Characteristics @TJ=25 ْC(unless otherwise specified)
Parameter
Min.
BV_DSS Drain-to-Source breakdown voltage 60
R_DS(on) Static Drain-to-Source on-resistance —
V_GS(th)
Gate threshold voltage
2.0
—
I_DSS
Drain-to-Source leakage current
—
Typ.
—
5.5
—
—
—
Gate-to-Source forward leakage
I_{GSS Gate-to-Source reverse leakage}
——
——
Max. Units
Test Conditions
—
8
4.0
2
10
100
-100
V V_GS=0V,I_D=250μA
mΩ V_GS=10V,I_D=30A
V V_DS=V_GS,I_D=250μA
V_DS=60V,V_GS=0V
μA V_DS=60V,
V_GS=0V,T_J=150ْC
nA ^VGS=20V
V_GS=-20V
©Silikron Semiconductor CO.,LTD.
2009.7.10
Version : 1.0
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