SSF6007 Datasheet, PDF (1/6 Pages) Silikron Semiconductor Co.,LTD. – Advanced MOSFET process technology

Main Product Characteristics:
SSF6007
V_DSS
-50V
R_DS(on) 2.1ohm(typ.)
6007
I_D
-130mA
Features and Benefits:
SOT-23
Marking and pin
Assignment
Schematic diagram
 Advanced MOSFET process technology
 Special designed for Line current interrupter in
telephone sets, Relay, high speed and line
transformer drivers and general purpose
applications
 Ultra low on-resistance with low gate charge
 Fast switching and reverse body recovery
 150℃ operating temperature
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance.
These features combine to make this design an extremely efficient and reliable device for use in line current
interrupter in telephone sets and a wide variety of other applications
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
ESD
TJ TSTG
Parameter
Continuous Drain Current, VGS @ -10V①
Continuous Drain Current, VGS @ -10V①
Pulsed Drain Current②
Power Dissipation③
Drain-Source Voltage
Gate-to-Source Voltage
ESD Rating (HBM module)
Operating Junction and Storage Temperature Range
Thermal Resistance
Max.
-130
-100
-520
230
-50
± 20
1
-55 to + 150
Symbol
Characterizes
Typ.
Max.
Junction-to-ambient (t ≤ 10s) ④
RθJA
—
556
Junction-to-Ambient (PCB mounted, steady-state) ④
—
540
Units
mA
mW
V
V
KV
°C
Units
℃/W
℃/W
©Silikron Semiconductor CO.,LTD.
2014.02.10
www.silikron.com
Version : 1.1
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