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SSF5N60F Datasheet, PDF (1/8 Pages) Silikron Semiconductor Co.,LTD. – Main Product Characteristics: | |||
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Main Product Characteristics:
VDSS
RDS(on)
ID
600V
2ohm(typ.)
4A
Features and Benefits:
TO220F
 Advanced trench MOSFET process technology
 Special designed for PWM, load switching and
general purpose applications
 Ultra low on-resistance with low gate charge
 Fast switching and reverse body recovery
 150â operating temperature
SSF5N60F
Marking and pin
Assignment
Schematic diagram
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10Vâ
Continuous Drain Current, VGS @ 10Vâ
Pulsed Drain Currentâ¡
Power Dissipationâ¢
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=27.5mH
Avalanche Current @ L=27.5mH
Operating Junction and Storage Temperature Range
Max.
4
2.5
16
33
0.26
600
± 30
220
4
-55 to + 150
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2011.08.19
www.silikron.com
Version : 1.0
page 1 of 8
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