SSF5508A Datasheet, PDF (1/6 Pages) Silikron Semiconductor Co.,LTD. – Advanced trench MOSFET process technology

Main Product Characteristics:
SSF5508A
V_DSS
R_DS(on)
55V
4.5mohm（Typ）
I_D
110A
Features and Benefits:
SSF5508A TOP View (TO263)
 Advanced trench MOSFET process technology
 Special designed for convertors and power controls
 Ultra low on-resistance
 175℃ operating temperature
 High Avalanche capability and 100% tested
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an
extremely efficient and reliable device for use in power switching application and a wide variety of other
applications
Absolute max Rating:
Symbol
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V①
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V①
IDM
Pulsed Drain Current②
ISM
Pulsed Source Current.(Body Diode)
PD @TC = 25°C
Power Dissipation③
Linear derating factor
VDS
Drain-Source Voltage
VGS
Gate-to-Source Voltage
dv/dt
Peak diode recovery voltage
EAS
Single Pulse Avalanche Energy @ L=0.3mH②
IAR
Avalanche Current @ L=0.3mH②
TJ TSTG
Operating Junction and Storage Temperature
Range
Max.
110
80
440
440
205
2
55
± 20
35
634
65
-55 to + 175
Units
A
W
W/ Cْ
V
V
v/ns
mJ
A
°C
Thermal Resistance
Symbol
R_θJC
R_θJA
Characterizes
Junction-to-case③
Junction-to-ambient (t ≤ 10s) ④
Value
0.73
50
Unit
℃/W
℃/W
©Silikron Semiconductor CO.,LTD.
2011.01.12
www.silikron.com
Version : 3.6
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