SSF53A0E Datasheet, PDF (1/5 Pages) Silikron Semiconductor Co.,LTD. – High Power and current handing capability

GENERAL FEATURES
● V_DS = 50V,I_D = 0.22A
R_DS(ON) < 6Ω @ V_GS=4.5V
R_DS(ON) < 3.5Ω @ V_GS=10V
ESD Rating：1000V HBM
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
SSF53A0E
Schematic diagram
APPLICATION
●Direct Logic-Level Interface: TTL/CMOS
●Drivers: Relays, Solenoids, Lamps,
Hammers,Display, Memories, Transistors, etc.
●Battery Operated Systems
●Solid-State Relays
Marking and pin Assignment
SOT-23-3L top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package Reel Size
53A0E
SSF53A0E
SOT-23-3L
Ø180mm
Tape width
8 mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous@ Current-Pulsed (Note 1)
I_D
I_D(70℃)
I_DM
Maximum Power Dissipation
P_D
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
50
±20
0.22
0.18
0.88
0.36
-55 To 150
Unit
V
V
A
A
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
R_θJA
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
350
℃ /W
Min Typ Max Unit
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1
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