SSF4953 Datasheet, PDF (1/5 Pages) Silikron Semiconductor Co.,LTD. – Battery protection

SSF4953
DESCRIPTION
The SSF4953 uses advanced trench technology to
provide excellent RDS(ON), low gate charge. It has
been optimized for power management applications
requiring a wide range of gave drive voltage ratings
(4.5V – 25V).
GENERAL FEATURES
●V_DS = -30V,I_D = -5.3A
R_DS(ON) < 85mΩ @ V_GS=-4.5V
R_DS(ON) < 53mΩ @ V _GS=-10V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
D1
D2
G1
G2
S1
S2
Schematic diagram
D1 D1 D2 D2
8 7 65
4953
1 2 34
S1 G1 S2 G2
Marking and pin Assignment
Application
●Battery protection
●Load switch
●Power management
SOP-8 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
4953
SSF4953
SOP-8
Ø330mm
Tape width
12mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
I_D
Drain Current-Continuous@ Current-Pulsed (Note 1)
I_DM
Maximum Power Dissipation
P_D
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
-30
±20
-5.3
-35
2.0
-55 To 150
Unit
V
V
A
A
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
R_θJA
62.5
℃/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV_DSS
V_GS=0V I_D=-250μA
Zero Gate Voltage Drain Current
I_DSS
V_DS=-24V,V_GS=0V
Gate-Body Leakage Current
I_GSS
V_GS=±25V,V_DS=0V
Min Typ Max Unit
-30
V
-1
μA
±100
nA
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