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SSF4703 Datasheet, PDF (1/5 Pages) Silikron Semiconductor Co.,LTD. – DC-DC conversion applications | |||
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SSF4703
DESCRIPTION
The SSF4703 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge . A
Schottky diode is provided to facilitate the
implementation of a bidirectional blocking switch,
or for DC-DC conversion applications.
GENERAL FEATURES
â MOSFET
VDS = -20V,ID = -3.4A
RDS(ON) < 160m⦠@ VGS=-1.8V
RDS(ON) < 120m⦠@ VGS=-2.5V
RDS(ON) < 90m⦠@ VGS=-4.5V
âSCHOTTKY
VR = 20V, IF = 1A, VF<0.5V @ 0.5A
â High Power and current handing capability
â Lead free product is acquired
â Surface Mount Package
Application
âDC-DC conversion applications
âLoad switch
âPower management
Schematic diagram
Marking and pin Assignment
DFN2X3-8L Bottom View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
4703
SSF4703
DFN2X3-8L
ï¼
Tape width
ï¼
Quantity
ï¼
ABSOLUTE MAXIMUM RATINGS(TA=25âunless otherwise noted)
Parameter
Symbol
MOSFET
Drain-Source Voltage
VDS
-20
Gate-Source Voltage
VGS
±8
ID
-3.4
Drain Current-Continuous@ Current-Pulsed (Note 1)
IDM
-15
Schottky reverse voltage
VR
Continuous Forward Current
IF
Pulsed Forward Current
IFM
Maximum Power Dissipation
PD
1.7
Operating Junction and Storage Temperature Range TJ,TSTG
-55 To 150
Schottky
20
1.9
7
0.96
-55 To 150
Unit
V
V
A
A
V
A
A
W
â
THERMAL CHARACTERISTICS
MOSFET
Thermal Resistance, Junction-to-Ambient (Note 2)
RθJA
75
â /W
©Silikron Semiconductor CO.,LTD.
1
http://www.silikron.com
v1.2
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