SSF4607D Datasheet, PDF (1/9 Pages) Silikron Semiconductor Co.,LTD. – Advanced trench MOSFET process technology

Main Product Characteristics:
V_DSS
-30V
R_DS(on) 19mΩ(typ.)
I_D
-25A ①
TO-252
Features and Benefits:
 Advanced trench MOSFET process technology
 Special designed for PWM, load switching and
general purpose applications
 Ultra low on-resistance with low gate charge
 Fast switching and reverse body recovery
 150℃ operating temperature
SSF4607D
D
G
Marking and pin
Assignment
S
Schematic diagram
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating:
Symbol
I_D @ TC = 25°C
I_D @ TC = 100°C
I_DM
P_D @TC = 25°C
V_DS
V_GS
T_J T_STG
Parameter
Continuous Drain Current, V_GS @ 10V(Silicon Limited)
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current ②
Power Dissipation
Drain-Source Voltage
Gate-to-Source Voltage
Operating Junction and Storage Temperature Range
Max.
-25 ①
-20 ①
-60
41
-30
± 20
-55 to + 150
Thermal Resistance
Symbol
R_θJC
R_θJA
Characterizes
Junction-to-case③
Junction-to-ambient (t ≤ 10s) ④
Junction-to-Ambient (PCB mounted, steady-state) ④
Typ.
—
—
—
Max.
3
25
50
Units
A
W
V
V
°C
Units
℃/W
℃/W
℃/W
©Silikron Semiconductor CO.,LTD.
2012.03.22
www.silikron.com
Version : 1.0
page 1 of 9