SSF4606 Datasheet, PDF (1/5 Pages) Silikron Semiconductor Co.,LTD. – High Power and current handing capability

DESCRIPTION
The SSF4606 uses advanced trench
technology MOSFET to provide excellent
R_DS(ON) and low gate charge. The
complementary MOSFET may be used
in power inverters, and other applications.
GENERAL FEATURES
●N-Channel
V_DS = 30V,I_D = 6.9A
R_DS(ON) < 42mΩ @ V_GS=4.5V
R_DS(ON) < 28mΩ @ V_GS=10V
●P-Channel
V_DS = -30V,I_D = -6A
R_DS(ON) < 58mΩ @ V_GS=-4.5V
R_DS(ON) < 35mΩ @ V_GS=-10V
●High Power and current handing capability
●Lead free product is acquired
●Surface Mount Package
SSF4606
N-channel ^P-channel
Schematic diagram
Marking and pin Assignment
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package Reel Size
4606
SSF4606
SOP-8
Ø330mm
SOP-8 top view
Tape width
12mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
T_A=25℃
Continuous Drain Current
I_D
T_A=70℃
Pulsed Drain Current (Note 1)
I_DM
T_A=25℃
Maximum Power Dissipation
P_D
T_A=70℃
Operating Junction and Storage Temperature Range
T_J,T_STG
N-Channel
30
±20
6.9
6.0
30
2.0
1.44
-55 To 150
P-Channel
-30
±20
-6
-5.0
-30
2.0
1.44
-55 To 150
Unit
V
V
A
A
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note2)
N-Ch
62.5
R_θJA
℃/W
P-Ch
62.5
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Min Typ Max Unit
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1
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