SSF4031C1 Datasheet, PDF (1/6 Pages) Silikron Semiconductor Co.,LTD. – Advanced MOSFET process technology

Main Product Characteristics:
V_DSS
-40V
R_DS(on) 24mohm(typ.)
ID
-30A
TO-252
Features and Benefits:
 Advanced MOSFET process technology
 Special designed for PWM, load switching and
general purpose applications
 Ultra low on-resistance with low gate charge
 Fast switching and reverse body recovery
 100%Avalanche Rated
SSF4031C1
Marking and pin _{Schematic diagram}
Assignment
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications
Absolute max Rating:
Symbol
ID @ TC = 25℃
ID @ TC = 100℃
IDM
PD @TC = 25℃
VDS
VGS
EAS
IAS
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current ②
Power Dissipation ③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.3mH
Avalanche Current @ L=0.3mH
Operating Junction Temperature Range
Storage Temperature Range
Max.
-30①
-20①
-120
83
1.02
-40
± 20
93
25
-55 to + 150
Units
A
W
W/℃
V
V
mJ
A
℃
©Silikron Semiconductor CO., LTD.
2015.01.22
www.silikron.com
Preliminary Version: 1.0 page 1 of 6