SSF4015 Datasheet, PDF (1/6 Pages) Silikron Semiconductor Co.,LTD. – Advanced trench MOSFET process technology

Main Product Characteristics:
V_DSS
-40V
R_DS(on) 11mΩ (typ.)
I_D
-40A
Features and Benefits:
TO-252 (D-PAK)
 Advanced trench MOSFET process technology
 Special designed for PWM, load switching and
general purpose applications
 Ultra low on-resistance with low gate charge
 High Power and current handing capability
 175℃ operating temperature
SSF4015
S_SSS_SF_F3₄₄6₀₀₁1₃₅2₅D
D
G
S
Marking and pin Schematic diagram
Assignment
Description:
It utilizes the advanced trench processing techniques to achieve extremely low on resistance and low gate
charge. These features combine to make this design an extremely efficient and reliable device for use in PWM,
load switching and a wide variety of other applications.
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
ISM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V①
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
Pulsed Source Current (Body Diode)②
Power Dissipation③
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.1mH
Single Pulse Avalanche Current @ L=0.1mH
Operating Junction and Storage Temperature Range
Max.
-40
-28
-120
-120
75
-40
± 20
40
28
-55 to + 175
Units
A
W
V
V
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2013.07.19
www.silikron.com
Version : 1.3
page 1 of 6