SSF4006 Datasheet, PDF (1/4 Pages) Silikron Semiconductor Co.,LTD. – Advanced trench process technology

SSF4006
Feathers:
„ Advanced trench process technology
„ avalanche energy, 100% test
ID =160A
BV=40V
Rdson=0.005Ω
„ Fully characterized avalanche voltage and current
Description:
The SSF4006 is a new generation of high voltage and low
current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
SSF4006 TOP View (T0-220)
and electrical parameter repeatability. SSF4006 is assembled
in high reliability and qualified assembly house.
Application:
„ Commercial-industrial application
Absolute Maximum Ratings
Parameter
I_D@T_c=25ْ C Continuous drain current,VGS@10V
I_D@T_c=100ْC
I_DM
Continuous drain current,VGS@10V
Pulsed drain current ①
P_D@T_C=25ْC
Power dissipation
Linear derating factor
V_GS
E_AS
E_AR
dv/dt
Gate-to-Source voltage
Single pulse avalanche energy ②
Repetitive avalanche energy
Peak diode recovery voltage
T_J
T_STG
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
Min.
R_θJC
Junction-to-case
—
R_θJA
Junction-to-ambient
—
Max.
160
100
640
150
2.0
±20
480
TBD
31
–55 to +150
Typ.
Max.
0.83
—
—
62
Units
A
W
W/ْ C
V
mJ
mJ
v/ns
ْC
Units
ْC/W
Electrical Characteristics @TJ=25 ْC(unless otherwise specified)
Parameter
Min. Typ. Max. Units
Test Conditions
BV_DSS Drain-to-Source breakdown voltage 40 —
— V V_GS=0V,I_D=250μA
R_DS(on) Static Drain-to-Source on-resistance — 0.0045 0.005 Ω V_GS=10V,I_D=30A
V_GS(th)
Gate threshold voltage
2.0 —
4.0 V V_DS=V_GS,I_D=250μA
——
1
V_DS=40V,V_GS=0V
I_DSS Drain-to-Source leakage current
——
10
μA V_DS=40V,
V_GS=0V,T_J=150ْC
Gate-to-Source forward leakage
I_GSS
Gate-to-Source reverse leakage
—
—
100 _nA V_GS=20V
— — -100
V_GS=-20V
©Silikron Semiconductor CO.,LTD.
2009.6.10
Version : 1.0
page 1of4