SSF4004 Datasheet, PDF (1/5 Pages) Silikron Semiconductor Co.,LTD. – Advanced trench process technology

SSF4004
Feathers:
 Advanced trench process technology
 Special designed for Convertors and power controls
 High density cell design for ultra low Rdson
 Fully characterized Avalanche voltage and current
 Avalanche Energy 100% test
ID=200A
BV=40V
Rdson=4 mΩ（max.）
Description:
The SSF4004 is a new generation of high voltage and low
current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SSF4004 is assembled
in high reliability and qualified assembly house.
Application:
 Power switching application
 Commercial-industrial application
SSF4004 TOP View (TO220)
Absolute Maximum Ratings
Parameter
I_D@T_c=25 ْC
Continuous drain current,VGS@10V
I_D@T_c=100ْC
I_DM
P_D@T_C=25ْC
Continuous drain current,VGS@10V
Pulsed drain current ①
Power dissipation
Linear derating factor
V_GS
dv/dt
Gate-to-Source voltage
Peak diode recovery voltage
E_AS
E_AR
T_J
T_STG
Single pulse avalanche energy ②
Repetitive avalanche energy
Operating Junction and
Storage Temperature Range
Max.
200
140
800
238
2.0
±20
31
520
TBD
–55 to +175
Units
A
W
W/ Cْ
V
v/ns
mJ
ْC
Thermal Resistance
Parameter
R_θJC
R_θJA
Junction-to-case
Junction-to-ambient
Min.
Typ.
Max.
—
0.63
—
—
—
62
Units
ْC/W
Electrical Characteristics @TJ=25 ْC (unless otherwise specified)
Parameter
Min. Typ.
BV_DSS
R_DS(on)
V_GS(th)
I_DSS
Drain-to-Source breakdown voltage 40 —
Static Drain-to-Source on-resistance — 3.5
Gate threshold voltage
2.0 —
Drain-to-Source leakage current
——
——
Gate-to-Source forward leakage
——
I_GSS
Gate-to-Source reverse leakage
——
©Silikron Semiconductor Corporation
2009.7.10
Max. Units
Test Conditions
—V
V_GS=0V,I_D=250μA
4 mΩ
V_GS=10V,I_D=30A
4.0 V
V_DS=V_GS,I_D=250μA
2
V_DS=40V,V_GS=0V
10 uA V_DS=40V,V_GS=0V,T_J=150ْC
100
nA
-100
V_GS=20V
V_GS=-20V
Version: 1.1
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