SSF3637S Datasheet, PDF (1/5 Pages) Silikron Semiconductor Co.,LTD. – High Power and current handing capability

SSF3637S
DESCRIPTION
The SSF3637S uses advanced trench
technology to provide excellent RDS(ON)
and low gate charge .This device is
suitable for use as a load switch or in
PWM applications.
GENERAL FEATURES
● VDS =- 30V,ID =-10A
RDS(ON) < 70mΩ @ VGS=-4.5V
RDS(ON) < 45mΩ @ VGS=-10V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
D
G
S
Schematic diagram
Marking and pin Assignment
Application
●PWM applications
●Load switch
●Power management
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
SSF3637S
SSF3637S
SOP-8
Ø330mm
SOP-8 top view
Tape width
12mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
ID(25℃)
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID(70℃)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-30
±20
-6.6
-5.2
-30
3.1
-55 To 150
Unit
V
V
A
A
A
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
75
℃/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
Min Typ Max Unit
-30
V
©Silikron Semiconductor CO.,LTD.
1
http://www.silikron.com
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